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Method for Magnetically Assisted Sputter Etching and Deposition

IP.com Disclosure Number: IPCOM000051654D
Original Publication Date: 1981-Feb-01
Included in the Prior Art Database: 2005-Feb-10

Publishing Venue

IBM

Related People

Authors:
Heiman, N [+details]

Abstract

The use of magnetic fields in sputter deposition is well known. T application of a transverse magnetic field to a conventional planar diode sputter geometry produces a considerable increase in ionization and rate; however, the discharge is swept to one side and the deposition pattern and target etch profile is very nonuniform.