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Passivation Process for Semiconductor Device with Fusible Link Redundancy Disclosure Number: IPCOM000051734D
Original Publication Date: 1981-Mar-01
Included in the Prior Art Database: 2005-Feb-10

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Davis, DE Motsiff, WT Poulin, NR [+details]


Semiconductor memory devices incorporating fusible link redundancy are provided in which terminal metallurgy is applied to devices prior to testing and fuse blowing. A subsequently applied polyimide passivating layer protects exposed metallurgy and acts as a blocking mask against alpha particle radiation.