Browse Prior Art Database

Dense Hot Electron Programmable Memory

IP.com Disclosure Number: IPCOM000051737D
Original Publication Date: 1981-Mar-01
Included in the Prior Art Database: 2005-Feb-10

Publishing Venue

IBM

Related People

Authors:
Gaffney, DP Kalter, HL Kotecha, HN Troutman, RR Wiedman, FW [+details]

Abstract

A programmable read-only memory is provided having an array operable at relatively low voltages wherein each cell has a heavily doped ion-implanted N+ region under a thin oxide layer to utilize a small capacitor which tracks with the active device capacitor. In the array, four cells share a common contact and polysilicon lines are provided to guard against recessed oxide breakdown. By adding an erase tab extending from the floating gate, the cell can be made to operate in an electrically erasable programmable read-only memory.