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Four State Memory Cell for Read Only Storage Disclosure Number: IPCOM000051738D
Original Publication Date: 1981-Mar-01
Included in the Prior Art Database: 2005-Feb-10

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Bernstein, K Zbrozek, JD [+details]


This read-only memory cell provides multi-state operation by digitally controlling the magnitude of the effective channel conductance of an IGFET device through the use of ion implantation of none, 1/3, 2/3 or all of the width of the channel.