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Fabrication Technique For an Ion Beam Lithography Mask in Tensile Stress

IP.com Disclosure Number: IPCOM000051752D
Original Publication Date: 1981-Mar-01
Included in the Prior Art Database: 2005-Feb-10

Publishing Venue

IBM

Related People

Authors:
Keller, JH McKenna, CM [+details]

Abstract

An arrangement is provided which eliminates the thermal expansion and bowing of a mask up to a given power density of an ion beam. In known fabrication techniques for ion beam lithography masks, it is advantageous to have the mask under tension so that the mask will not expand and distort when subjected to the heat flux of the ion beam during exposure. Rather, the temperature rise will act to relieve some of the tensile stress.