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Browse Prior Art Database

Photoresist Process For High Current Ion Implant Processing

IP.com Disclosure Number: IPCOM000051753D
Original Publication Date: 1981-Mar-01
Included in the Prior Art Database: 2005-Feb-10

Publishing Venue

IBM

Related People

Authors:
Bauer, EH Jung, G Marinaccio, FA Marsh, RL Rozich, WR [+details]

Abstract

State-of-the-art photoresist processes call for the addition of a crosslinking polymer to the photoresist solution in order to render the photoresist coat capable of withstanding ion beam currents in excess 1 mA. Although this results in a somewhat improved photoresist mask, it is only applied with limited success. Typically, when the photoresist-coated wafers are subjected to high intensity ion beams, the photoresist coat tends to blister and lift off, even with the addition of the cross-linking polymer, resulting in a high rework level and, at times, total destruction. In addition, it has been found that post ion-implant cracking of the photoresist coat increases the average rework level.