The InnovationQ application will be updated on Sunday, May 31st from 10am-noon ET. You may experience brief service interruptions during that time.
Browse Prior Art Database

Photoresist Process For High Current Ion Implant Processing

IP.com Disclosure Number: IPCOM000051753D
Original Publication Date: 1981-Mar-01
Included in the Prior Art Database: 2005-Feb-10

Publishing Venue


Related People

Bauer, EH Jung, G Marinaccio, FA Marsh, RL Rozich, WR [+details]


State-of-the-art photoresist processes call for the addition of a crosslinking polymer to the photoresist solution in order to render the photoresist coat capable of withstanding ion beam currents in excess 1 mA. Although this results in a somewhat improved photoresist mask, it is only applied with limited success. Typically, when the photoresist-coated wafers are subjected to high intensity ion beams, the photoresist coat tends to blister and lift off, even with the addition of the cross-linking polymer, resulting in a high rework level and, at times, total destruction. In addition, it has been found that post ion-implant cracking of the photoresist coat increases the average rework level.