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Elimination of RIE Induced Metallic Contamination Disclosure Number: IPCOM000051754D
Original Publication Date: 1981-Mar-01
Included in the Prior Art Database: 2005-Feb-10

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Das, G Montillo, FJ [+details]


Heavy metal contaminants incorporated into silicon wafers during reactive ion etching (RIE) can cause serious leakage problems and low device yields. Etch solutions used to remove this contaminant from silicon can themselves leave metallic residues due to their chemical composition.