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Evaluation of Polysilicon Hardware by the Use of MOS Charge Retention

IP.com Disclosure Number: IPCOM000051758D
Original Publication Date: 1981-Mar-01
Included in the Prior Art Database: 2005-Feb-10

Publishing Venue

IBM

Related People

Authors:
Kulkarni, SB Montillo, FJ Pistor, RL Poponiak, MR [+details]

Abstract

Differences in contamination levels between susceptors used for epitaxial silicon deposition made of polysilicon or silicon carbide coated graphite can be measured by a MOS charge retention technique.