Browse Prior Art Database

Sense Diode Disclosure Number: IPCOM000051759D
Original Publication Date: 1981-Mar-01
Included in the Prior Art Database: 2005-Feb-10

Publishing Venue


Related People

Banker, DC Battista, MA Chen, SC [+details]


In the fabrication of FET designs, temperature monitoring is not done with FET devices because of the poor correlation of their forward voltage characteristic with temperature. To meet thermal reliability requirements, a thermal test site that uses a sense diode can be built from a standard FET fabrication. This sense diode is formed by utilizing the P-substrate for its anode and the N-type ion implant (source/drain region) for its cathode. To enhance performance, two anode contacts are used which decreases diode series resistance. The drawing shows the horizontal and vertical geometries of the device.