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Pulse Nonlinearity Method for Predicting Bond Failure Disclosure Number: IPCOM000051760D
Original Publication Date: 1981-Mar-01
Included in the Prior Art Database: 2005-Feb-10

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Danka, AJ Davidson, DW Lloyd, JR Prokop, GS Knepper, LE Parker, CP [+details]


An asymmetrical AC voltage pulse is applied across a four-point probe structure in contact with a metallurgical bond of a semiconductor structure. A high resistance due to poor bonding of the powering connections results in a low DC voltage reading across the stripe. The voltage drop across the poor bonds does not allow sufficient current to pass through the stripe to cause joule heating. This effect can be used to predict early bond failure in chips.