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Thin Polysilicon Resistor Process

IP.com Disclosure Number: IPCOM000051761D
Original Publication Date: 1981-Mar-01
Included in the Prior Art Database: 2005-Feb-10

Publishing Venue

IBM

Related People

Authors:
Leas, JM Nagarajan, A [+details]

Abstract

It has been determined experimentally that the optimum thickness for fabrication of polycrystalline silicon resistors to provide values up to 20,000 ohms/square and a temperature coefficient of less than about 0.2 percent/degrees C is 150+/-50 nm.