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Cryo Panel Heat Absorber to Enhance Wafer Cooling During Ion Implantation Disclosure Number: IPCOM000051765D
Original Publication Date: 1981-Mar-01
Included in the Prior Art Database: 2005-Feb-10

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Bayer, EH Kranik, JR Mueller, WF [+details]


The ion-implant arrangement described provides a cryo-cooled heatsink i close proximity to either the surface of a wafer or the wafer-back, keeping the temperature of the wafer within ""safe'' limits during ion bombardment. Since most of the heat transfer in vacuum is achieved by radiation, it is essential to provide a surface to which the heat can radiate, preferentially, and then remove the heat rapidly by cooling.