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Two Dimensional PNP Transistor

IP.com Disclosure Number: IPCOM000051873D
Original Publication Date: 1981-Mar-01
Included in the Prior Art Database: 2005-Feb-11

Publishing Venue

IBM

Related People

Authors:
Beresford, R [+details]

Abstract

In a regular double-diffused pnp, as shown in Fig. 1, the base dose is implanted into the top surfaced silicon 12 of substrate 10, then driven in to counter-dope the implanted collector region 18, and contacted by the buried n+ sublayer 14. In the two-dimensional pnp shown in Fig. 2, the etch mask at this point is enlarged to insure that the oxide isolation 16 is exposed on three sides of the collector 18. The oxide 16 is then etched down below the silicon surface to expose a silicon sidewall.