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Trench Refill with Chemical Vapor Deposition Mixed Glasses

IP.com Disclosure Number: IPCOM000051874D
Original Publication Date: 1981-Mar-01
Included in the Prior Art Database: 2005-Feb-11

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Related People

Lever, RF Silvestri, VJ [+details]


Techniques are known for cutting trenches in single crystal silicon and refilling them with dielectrics, primarily SiO(2). Processes for using fritted glasses to fill the trenches are also known. This article proposes using chemical vapor deposition (CVD) for filling the trenches, but including in the reactant gas stream compounds such as GeH(4), GeCl(4) B(2)H(6), BCL(3) so that germanosilicate, borosilicate or other mixed glasses may be deposited. This would be in addition to the usual silicon-containing species, e.g., SiCl(4), SiH(4) and oxidant gasses such as N(2)O, CO(2) O(2), H(2)O, etc., which are at present used to deposit pure SiO(2).