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Batch cleaving of GaAs wafers and similar materials may be done by scribing the wafer surface and then controllably bending the wafer so that it fractures along the scribe lines.
English (United States)
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Process for Batch Cleaving GaAs and Similar Materials
Batch cleaving of GaAs wafers and similar materials may be done by
scribing the wafer surface and then controllably bending the wafer so that it
fractures along the scribe lines.
The cleavage planes in GaAs are (110) planes. Devices which require such
planes to be normal to the plane of the device structure (e.g., the epitaxial layers
which form an injection laser) are grown on an appropriate orientation to make
this possible, e.g., the (100) plane. In order to cleave by this method, the
following conditions are necessary: (a) As is well known, to cleave bars of a
given length L, the wafer should be of thickness L/2 or less. (b) For this process,
both surfaces of the wafer should be free of damage (such as may be caused by
lapping). (c) Intentional damage is introduced onto one surface of the wafer by
means of a diamond or other suitable scriber. This damage should be in the
form of short lines parallel to the direction of the desired cleave (the cleavage
directions must have been identified previously). It must be noted that the cleave
under the scribe will not be of high quality. This damage simply serves to start a
high quality cleave. Using a GaAs wafer 100 mu m thick and 2 cm x 2 cm,
scribes 300 mu m or less can produce bars with perfectly cleaved surfaces over
the remainder of the 2 cm length. (d) Cleaving is achieved by controlled bending
of the scribed wafer so that the plane of the radius is normal to...