Semiconductor Pad Terminal Metallurgy
Original Publication Date: 1981-Apr-01
Included in the Prior Art Database: 2005-Feb-11
This method and structure provide an improved bond between metallurgica layers used in forming pads for controlled-collapse-chip-connection (C4) terminal metallurgy. A delamination problem occurring between chromium and upper layers is avoided by the substitution of a layer of aluminum for that of chromium.