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Semiconductor Pad Terminal Metallurgy Disclosure Number: IPCOM000051911D
Original Publication Date: 1981-Apr-01
Included in the Prior Art Database: 2005-Feb-11

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Aimi, BR [+details]


This method and structure provide an improved bond between metallurgica layers used in forming pads for controlled-collapse-chip-connection (C4) terminal metallurgy. A delamination problem occurring between chromium and upper layers is avoided by the substitution of a layer of aluminum for that of chromium.