Browse Prior Art Database

Semiconductor Pad Terminal Metallurgy

IP.com Disclosure Number: IPCOM000051911D
Original Publication Date: 1981-Apr-01
Included in the Prior Art Database: 2005-Feb-11

Publishing Venue

IBM

Related People

Authors:
Aimi, BR [+details]

Abstract

This method and structure provide an improved bond between metallurgica layers used in forming pads for controlled-collapse-chip-connection (C4) terminal metallurgy. A delamination problem occurring between chromium and upper layers is avoided by the substitution of a layer of aluminum for that of chromium.