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Self Aligning Oxidization Barrier

IP.com Disclosure Number: IPCOM000051916D
Original Publication Date: 1981-Apr-01
Included in the Prior Art Database: 2005-Feb-11

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Related People

Dun, H Koburger, CW [+details]


This method provides a sequence of steps including a lift-off technique to produce a silicon nitride barrier self-aligned to a polysilicon gate, subsequently permitting independent polysilicon oxidization thickness variations or control.