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Gated Schottky Barrier Diode Disclosure Number: IPCOM000051919D
Original Publication Date: 1981-Apr-01
Included in the Prior Art Database: 2005-Feb-11

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Atwood, BC [+details]


A gated Schottky barrier diode (SBD) arranged to change the shape of the electric field around a Schottky barrier diode formed on a silicon substrate is used for making comprehensive studies of the diode.