Browse Prior Art Database

Gated Schottky Barrier Diode

IP.com Disclosure Number: IPCOM000051919D
Original Publication Date: 1981-Apr-01
Included in the Prior Art Database: 2005-Feb-11

Publishing Venue

IBM

Related People

Authors:
Atwood, BC [+details]

Abstract

A gated Schottky barrier diode (SBD) arranged to change the shape of the electric field around a Schottky barrier diode formed on a silicon substrate is used for making comprehensive studies of the diode.