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A gated Schottky barrier diode (SBD) arranged to change the shape of the electric field around a Schottky barrier diode formed on a silicon substrate is used for making comprehensive studies of the diode.
English (United States)
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Gated Schottky Barrier Diode
A gated Schottky barrier diode (SBD) arranged to change the shape of the
electric field around a Schottky barrier diode formed on a silicon substrate is
used for making comprehensive studies of the diode.
On a silicon substrate or wafer 10, layers of silicon dioxide 12 and silicon
nitride 14 are formed having an opening 16 therein. As indicated in Fig. 1, silicon
dioxide layer 12 is etched so as to be undercut with respect to silicon nitride layer 14. A thin layer of any known Schottky barrier diode metal is then deposited on
silicon nitride layer 14 and on the surface of silicon substrate 10 through opening 16. Due to the overhanging edges of silicon nitride layer 14 and the thinness of
the SBD metal, the portion of the SBD metal in contact with substrate 10 forms a
Schottky barrier diode 18 which is separated from but in the proximity of the gate
metal 20. Layers 12 and 14 may have a thickness of 2000 angstroms and 800
angstroms, respectively, with the SBD metal having a thickness of about 2000
angstroms for adequate electrical separation between SBD 18 and its gate metal
20 while permitting depletion regions of SBD 18 and gate metal 20 to merge.
For very small diodes an extended metal line or stripe may be provided for
connection to a pad, as indicated in Figs. 2 and 3, where Fig. 2 is a sectional
view and Fig. 3 is a top view, and where elements similar to those shown in Fig.
1 have the same reference numbers.