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Shared Contact Non Volatile Device Cells Disclosure Number: IPCOM000051927D
Original Publication Date: 1981-Apr-01
Included in the Prior Art Database: 2005-Feb-11

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Kalter, HL Kotecha, HN [+details]


Non-volatile device cells, using effectively a known dual-gate electrically erasable read-only memory cell having enhanced conduction doped insulators, are arranged so that contacts are shared by a plurality of cells. Enhanced conduction doped insulators are described in U. S. Patents 3,972,059 and 4,104,675.