Four Terminal Bipolar Electrically Alterable Read Only Memory
Original Publication Date: 1981-Apr-01
Included in the Prior Art Database: 2005-Feb-11
An essentially four-terminal bipolar electrically alterable read-only memory is provided which operates with relatively low voltage with the use of graded band gap or silicon-rich insulators. Graded band gap or silicon-rich insulators, or insulators of this type, are disclosed in, e.g., U. S. Patents 3,972,059 and 4,104,675.