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SiO(2) Encapsulation of Radioisotope Sources Disclosure Number: IPCOM000051945D
Original Publication Date: 1981-Apr-01
Included in the Prior Art Database: 2005-Feb-11

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Hicks, WW McKenna, CM [+details]


A process is described for the elimination of contamination caused by radioactive material through touch or diffusion without substantial energy loss of emitted particles. This is achieved by initially sputtering a layer of SiO(2) without resputtering on the radioactive material an then sputtering a layer of SiO(2) with resputtering on the initial layer. Alternatively, the initial layer of SiO(2) may be deposited on the radioactive material by chemical vapor deposition, and this followed by the sputtering of a layer of SiO(2) with resputtering.