One-Mask Polysilicon Resistor
Original Publication Date: 1981-Apr-01
Included in the Prior Art Database: 2005-Feb-11
This article describes a technique to make high valued P type resistors with low temperature and voltage coefficients in any bipolar process technology using only one mask per resistor implant type. The process is also found to give a resistor uniformity of +/-10% up to 30 K omega/ and is readily implementable in any 2 mu epitaxial bipolar technology. The structure fabricated with the process is shown in the figure.