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Polysilicon Resistor Contact Doping Process Simplification - "No-End Poly Resistor"

IP.com Disclosure Number: IPCOM000051948D
Original Publication Date: 1981-Apr-01
Included in the Prior Art Database: 2005-Feb-11

Publishing Venue

IBM

Related People

Authors:
Leas, JM Nagarajan, A Smith, RG [+details]

Abstract

Standard implanted and diffused high value resistors in monocrystalline silicon require additional impurity implants for use as contacts. It has been determined that polysilicon resistors at least as high as 5.5 K omega/ can be fabricated with low contact resistance without the need for any additional impurity implants for use as contacts. Thus, the need for a second implant can be eliminated. This permits the implementation of a one-mask post reoxidation implant process for ion-implanted polysilicon resistors.