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The process described here self-aligns metal over device contacts as well as eliminates juxtaposition of N/+/ subcollector and P/+/ isolation, thereby reducing collector-isolation capacitance.
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Metallization and Isolation for Bipolar Devices
The process described here self-aligns metal over device contacts as well as
eliminates juxtaposition of N/+/ subcollector and P/+/ isolation, thereby reducing
As shown in Fig. 1, following the conventional bipolar process starting with a
P/-/ substrate 1, N/+/ subcollector 2, N/-/ epi 3 and recessed oxidation isolation
(ROI) 4, a deep P/+/ isolation implantation 5 around the ROI is carried out and a
P-base 6 is implanted or diffused. Next, thermal oxide 7 is grown (about 1000
angstroms), followed by the deposition of about 1000 angstroms thick layer of
nitride 8. Next, an approximately 1.0-micron thick layer of polysilicon 9 or
amorphous silicon (poly), preferably at low temperature, is deposited followed by
a thin layer of nitride 10.
Then, a mask is used to open up windows in the polysilicon, preferably by
RIE (reactive ion etching), for the emitter, collector, etc., regions, and the poly is
oxidized, preferably by low pressure oxidation, to form SiO(2) "studs" 11 around
the openings, as shown in Fig. 2.
A second mask is then used to cover the regions (such as the P-isolation,
Schottky anode regions) where an N/+/ emitter implant is not required. RIE
and/or chemical etch is then used to remove the nitride and oxide layers over the
emitter and collector windows, and a thin thermal oxide (screen oxide) is grown,
if desired, and then N/+/ as is implanted for the emitters. Next, the e...