Browse Prior Art Database

Method for Forming Palladium Silicon Contacts and Electrodes on Silicon Semiconductor Devices

IP.com Disclosure Number: IPCOM000051960D
Original Publication Date: 1981-Apr-01
Included in the Prior Art Database: 2005-Feb-11

Publishing Venue

IBM

Related People

Authors:
Anantha, NG Bhatia, HS Kumar, AH [+details]

Abstract

Hydrogen gas has the ability to reduce silica (SiO(2)) in the presence palladium (pd) at temperatures of about 725 degrees C. This action is exploited in producing thin SiO(2) layers of different thicknesses and in making ohmic and Schottky contact to silicon surfaces through different thicknesses of intervening SiO(2).