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Browse Prior Art Database

AC Write Scheme for Bipolar Random Access Memories using Schottky Coupled Cells

IP.com Disclosure Number: IPCOM000051975D
Original Publication Date: 1981-Apr-01
Included in the Prior Art Database: 2005-Feb-11

Publishing Venue

IBM

Related People

Authors:
Dorler, JA Mosley, JM Seeger, RO Struk, JR [+details]

Abstract

The write circuitry (scheme) presently used with the complementary transistor switch cell (Fig. 1) is a direct coupled DC voltage type. The power expended with this scheme is about 0.5 watt, or 20% of the entire chip power.