The InnovationQ application will be updated on Sunday, May 31st from 10am-noon ET. You may experience brief service interruptions during that time.
Browse Prior Art Database

AC Write Scheme for Bipolar Random Access Memories using Schottky Coupled Cells

IP.com Disclosure Number: IPCOM000051975D
Original Publication Date: 1981-Apr-01
Included in the Prior Art Database: 2005-Feb-11

Publishing Venue


Related People

Dorler, JA Mosley, JM Seeger, RO Struk, JR [+details]


The write circuitry (scheme) presently used with the complementary transistor switch cell (Fig. 1) is a direct coupled DC voltage type. The power expended with this scheme is about 0.5 watt, or 20% of the entire chip power.