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High and low barrier Schottky diodes are used to minimize circuit components while still preventing the simultaneous conduction of the pull-up and the discharge transistors of a push-pull driver circuit.
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Push Pull Driver Circuit using High and Low Barrier Schottky Diodes
High and low barrier Schottky diodes are used to minimize circuit
components while still preventing the simultaneous conduction of the pull-up and
the discharge transistors of a push-pull driver circuit.
When T(1) and T(2) are on, the voltage from the base to the emitter of T(3)
(V(BE3)) is equal to V(BE1) (ON) - V(F1) V(F2), where V(F1) and V(F2) are t
voltage drops across high barrier Schottky diode D1 and low barrier Schottky
diode D2, respectively. The high barrier SBD uses a platinum silicide anode,
whereas the low barrier SBD uses a titanium-tungsten anode.
Since V(F1) - V(F2) is approximately equal to 0.3 V, then V(BE3) is equal to
the forward conduction bias V(BE) of conducting T(1) - 0.3 V which causes T3 to
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