Browse Prior Art Database

Very Low Power Random Access Memory Cell

IP.com Disclosure Number: IPCOM000052001D
Original Publication Date: 1981-Apr-01
Included in the Prior Art Database: 2005-Feb-11

Publishing Venue

IBM

Related People

Authors:
Simi, VM [+details]

Abstract

A cross-coupled memory cell has enhancement-mode FETs of zero volt threshold and 1:1 width-to-length ratio connected gate-to-source as loads. Cell size and power dissipation are reduced, while stability to unregulated power sources and fast operation are achieved.