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Electropolymerization of N Substituted Pyrroles on Silicon

IP.com Disclosure Number: IPCOM000052036D
Original Publication Date: 1981-Apr-01
Included in the Prior Art Database: 2005-Feb-11

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Diaz, AF Kanazawa, KK [+details]


We have found a procedure for growing films of poly-N-methylpyrrole on silicon surface. The films are grown by electrooxidation of N-methyl-pyrrole on the silicon surface using a 0.3M H(2)SO(4) solution in dry CH(3)CN which is free of O(2). A constant potential of 1.2 V vs. SSCE was used. Under these conditions the oxidative corrosion of silicon is retarded and the film of polymer grows evenly. The silicon used as an electrode was cleaned by abrasive polishing in order to remove the oxide layer.