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Superconducting Tunnel Device with LPE Grown Barrier

IP.com Disclosure Number: IPCOM000052063D
Original Publication Date: 1981-Apr-01
Included in the Prior Art Database: 2005-Feb-11

Publishing Venue

IBM

Related People

Authors:
Gambino, RJ Moore, DF Scheel, HJ [+details]

Abstract

For use as a tunneling barrier, a single-crystal semiconductor or insulator layer is epitaxially grown from the liquid phase on a superconducting base electrode.