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Silicon Gate MOSFET with Self Aligned Buried Source and Drain Contacts

IP.com Disclosure Number: IPCOM000052088D
Original Publication Date: 1981-Apr-01
Included in the Prior Art Database: 2005-Feb-11

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Related People

Ning, TH [+details]


This article relates generally to a process for fabricating semiconductor devices and more specifically to a process for fabricating a silicon-gate MOSFET with self-aligned source and drain contacts.