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CMOS Field Effect Transistors with P Channel Devices using Silicides

IP.com Disclosure Number: IPCOM000052121D
Original Publication Date: 1981-May-01
Included in the Prior Art Database: 2005-Feb-11

Publishing Venue

IBM

Related People

Authors:
Dash, S Roberts, S [+details]

Abstract

A fabrication procedure is described for providing iridium silicide P channel gate electrodes in complementary metal-oxide semiconductor (CMOS) field-effect transistors. This process may be used for bulk CMOS and for CMOS devices in the silicon-on-sapphire (SOS) technology.