CMOS Field Effect Transistors with P Channel Devices using Silicides
Original Publication Date: 1981-May-01
Included in the Prior Art Database: 2005-Feb-11
A fabrication procedure is described for providing iridium silicide P channel gate electrodes in complementary metal-oxide semiconductor (CMOS) field-effect transistors. This process may be used for bulk CMOS and for CMOS devices in the silicon-on-sapphire (SOS) technology.