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High Capacitance RAM Cell using Two Layers of Polysilicon

IP.com Disclosure Number: IPCOM000052124D
Original Publication Date: 1981-May-01
Included in the Prior Art Database: 2005-Feb-11

Publishing Venue

IBM

Related People

Authors:
Dunn, HP Silverman, R [+details]

Abstract

A high-charge storage one-device random-access memory (RAM) cell struct alleviates cell sensing problems and alpha particle soft errors. The cell 10 can be fabricated in a conventional double polysilicon technology.