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Schottky barrier diode contact openings are subjected to an oxidation following reactive ion etching to mask pinholes and protect the silicon areas from exposure to the emitter diffusion.
English (United States)
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Schottky Barrier Diode Leakage Reduction
Schottky barrier diode contact openings are subjected to an oxidation
following reactive ion etching to mask pinholes and protect the silicon areas from
exposure to the emitter diffusion.
As shown in Fig. 1, a pinhole 1 in silicon nitride layer 2 exposes silicon
dioxide layer 3 in the Schottky barrier diode region during the reactive ion etch
contact opening step. The pinhole 1 is then reproduced as pinhole 4 in silicon
dioxide layer 3 (Fig. 2). This exposes silicon substrate 5 to the emitter diffusion
(N+), thus forming an ohmic contact to silicon at 6 (Fig. 3). This is prevented by
oxidizing the silicon wafers, after the reactive ion etch contact opening step, so
as to grow approximately 500 angstroms of oxide, before the emitter diffusion
window 7 is opened.
Page 2 of 2
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