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Schottky Barrier Diode Leakage Reduction

IP.com Disclosure Number: IPCOM000052154D
Original Publication Date: 1981-May-01
Included in the Prior Art Database: 2005-Feb-11

Publishing Venue

IBM

Related People

Authors:
Clark, LJ Edel, WA Haddad, NF Sharif, AU [+details]

Abstract

Schottky barrier diode contact openings are subjected to an oxidation following reactive ion etching to mask pinholes and protect the silicon areas from exposure to the emitter diffusion.