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Hole Opening in Polysilicon by Selective Doping and Removal Technique Disclosure Number: IPCOM000052162D
Original Publication Date: 1981-May-01
Included in the Prior Art Database: 2005-Feb-11

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Related People

Bartholomew, RF Revitz, M Shepard, JF [+details]


In certain integrated circuit structures a hole in a polysilicon layer has to be opened to an underlying single crystalline silicon layer. Presently, a reactive ion etching step is used for this opening. However, it is extremely difficult to stop etching at the single crystalline surface, and severe overetching of the single crystalline layer can occur.