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Removal of Contamination Reaction Residues from Palladium Films

IP.com Disclosure Number: IPCOM000052164D
Original Publication Date: 1981-May-01
Included in the Prior Art Database: 2005-Feb-11

Publishing Venue

IBM

Related People

Authors:
Flederbach, D Gartner, HM Rich, D Tsai, HJ [+details]

Abstract

An undesirable film is formed as a result of an interaction between a palladium film and contamination introduced on a silicon wafer surface prior to the palladium deposition. The improved process makes it possible to etch the unreacted palladium by breaking the chemical bond between the palladium film and its underlying substrate. The process does not attack the palladium silicide (PdSi(2)) contact to the silicon.