Cathode Plate for Backside Oxide Strip in an RIE Reactor
Original Publication Date: 1981-May-01
Included in the Prior Art Database: 2005-Feb-11
A system is described which allows the removal of a silicon dioxide fil from the backside surface of a silicon wafer which may have electrical circuit patterns and/or layers of patterns upon its opposite (front) side. The system utilizes reactive ion etching (RIE) and thus allows film removal without the need for exposure of the wafer to a wet chemical process and associated rinsing and drying, or the application of a frontside protection layer.