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Cathode Plate for Backside Oxide Strip in an RIE Reactor

IP.com Disclosure Number: IPCOM000052165D
Original Publication Date: 1981-May-01
Included in the Prior Art Database: 2005-Feb-11

Publishing Venue

IBM

Related People

Authors:
Hendricks, CJ [+details]

Abstract

A system is described which allows the removal of a silicon dioxide fil from the backside surface of a silicon wafer which may have electrical circuit patterns and/or layers of patterns upon its opposite (front) side. The system utilizes reactive ion etching (RIE) and thus allows film removal without the need for exposure of the wafer to a wet chemical process and associated rinsing and drying, or the application of a frontside protection layer.