Buried Channel CCD Double Implant
Original Publication Date: 1981-May-01
Included in the Prior Art Database: 2005-Feb-11
Fig. 1 shows a cross-section of a buried channel charge-coupled device (CCD) structure having P/+/ channel stop 10 in P-silicon substrate 12. The stop 10 is under recessed silicon dioxide regions 14. The CCD device includes N-channel 15, gate silicon dioxide layer 16 and gate electrode of doped polycrystalline silicon 17.