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Buried Channel CCD Double Implant

IP.com Disclosure Number: IPCOM000052167D
Original Publication Date: 1981-May-01
Included in the Prior Art Database: 2005-Feb-11

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Bar-Gadda, O [+details]


Fig. 1 shows a cross-section of a buried channel charge-coupled device (CCD) structure having P/+/ channel stop 10 in P-silicon substrate 12. The stop 10 is under recessed silicon dioxide regions 14. The CCD device includes N-channel 15, gate silicon dioxide layer 16 and gate electrode of doped polycrystalline silicon 17.