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Browse Prior Art Database

Tailoring of Metal Silicide Formation Rate

IP.com Disclosure Number: IPCOM000052169D
Original Publication Date: 1981-May-01
Included in the Prior Art Database: 2005-Feb-11

Publishing Venue

IBM

Related People

Authors:
Chu, WK Mayer, JW Ottaviani, G [+details]

Abstract

The contact metal to semiconductor devices can short or degrade thin or shallow PN structures and thereby cause device failure or reduced performance. One way to avoid this problem is to deposit thin layers of metals. However, it is difficult to control such thin layers in manufacturing. An alloy of a high temperature metal silicide and low temperatur metal silicide can be used to achieve controlled thicknesses of the low temperature silicide in manufacturing of the alloy silicide. For example, See Original This type of reaction is sufficiently general so that one could use any of the near-noble metals (Ni, Pd, Pt) with any of the refractory group IVB, VB, VIB elements (Ti, V, W).