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Browse Prior Art Database

Formation of a Transition Metal Schottky Diode by Ion Beam Mixing

IP.com Disclosure Number: IPCOM000052172D
Original Publication Date: 1981-May-01
Included in the Prior Art Database: 2005-Feb-11

Publishing Venue

IBM

Related People

Authors:
Campbell, DR Chu, WK [+details]

Abstract

Transition metal/silicon Schottky diodes are typically processed at temperatures which are too low to create an interfacial metal silicide layer by ordinary equilibrium reaction kinetics. Consequently, the device properties are surface sensitive and difficult to control. Ion-beam mixing can cause the formation of a metal silicide layer at low temperatures, thus producing a stable and reproducible device.