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Bipolar Polysilicon Base Process

IP.com Disclosure Number: IPCOM000052178D
Original Publication Date: 1981-May-01
Included in the Prior Art Database: 2005-Feb-11

Publishing Venue

IBM

Related People

Authors:
Nagarajan, A Sarkary, HG [+details]

Abstract

It has been determined that ion beam milling can be used to provide considerably tighter control of etched images and a more reproducible control of gain in bipolar transistors, particularly in those utilizing a polysilicon base process.