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Browse Prior Art Database

Capacitor Structure for Bipolar Memory Device

IP.com Disclosure Number: IPCOM000052179D
Original Publication Date: 1981-May-01
Included in the Prior Art Database: 2005-Feb-11

Publishing Venue

IBM

Related People

Authors:
Howard, JK [+details]

Abstract

Some bipolar memory cells require a low-leakage high-capacitance densi capacitor. Described here is a capacitor structure to meet increased requirements of such cells.