Browse Prior Art Database

High Speed, High Density Bipolar Technology

IP.com Disclosure Number: IPCOM000052182D
Original Publication Date: 1981-May-01
Included in the Prior Art Database: 2005-Feb-11

Publishing Venue

IBM

Related People

Authors:
Jambotkar, CG [+details]

Abstract

The following steps describe a method for fabricating high-speed, high-performance bipolar circuit components. In particular, a method is described for fabricating high-performance bipolar NPN transistors, Schottky diodes with P guard rings, and resistors with approximately 400 ohms/ sheet resistance.