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High Speed, High Density Bipolar Technology Disclosure Number: IPCOM000052182D
Original Publication Date: 1981-May-01
Included in the Prior Art Database: 2005-Feb-11

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Jambotkar, CG [+details]


The following steps describe a method for fabricating high-speed, high-performance bipolar circuit components. In particular, a method is described for fabricating high-performance bipolar NPN transistors, Schottky diodes with P guard rings, and resistors with approximately 400 ohms/ sheet resistance.