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Compact NPN Transistor

IP.com Disclosure Number: IPCOM000052183D
Original Publication Date: 1981-May-01
Included in the Prior Art Database: 2005-Feb-11

Publishing Venue

IBM

Related People

Authors:
Jambotkar, CG [+details]

Abstract

A method is described for realizing very compact NPN transistors using self-aligned metal emitter and appropriately doped polysilicon with a top layer of tungsten silicide to establish contacts to the collector and base.