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Method To Form Polysilicon Resistors Along With High

IP.com Disclosure Number: IPCOM000052185D
Original Publication Date: 1981-May-01
Included in the Prior Art Database: 2005-Feb-11

Publishing Venue

IBM

Related People

Authors:
Jambotkar, CG [+details]

Abstract

A method is described to realize polysilicon resistors simultaneously with high-performance NPN transistors.