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Method for Characterizing Low Concentration Ion Implantations

IP.com Disclosure Number: IPCOM000052190D
Original Publication Date: 1981-May-01
Included in the Prior Art Database: 2005-Feb-11

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Elliott, BJ Hearn, EW Markovits, G Watts, GD [+details]


Ion implantation has taken the place of many standard diffusions in hig density large-scale integrated circuit process lines. The advantages of control, low concentration and low junction depth profiles are the key to the success of these processes.