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Incorporation of Dopant Into Amorphous Silicon and Thermoelectric Device

IP.com Disclosure Number: IPCOM000052284D
Original Publication Date: 1981-May-01
Included in the Prior Art Database: 2005-Feb-11

Publishing Venue

IBM

Related People

Authors:
Brodsky, MH Kirby, PB [+details]

Abstract

Dope amorphous silicon films were made from a Plasma glow discharge in a gas mixture of 1% arsenic pentafluoride (AsF(5)) and 99% silane (SiH(4)) The resulting films had several advantages over films prepared similarly using the conventional arsenic-bearing (arsine, AsH(3)) gas. The advantages are that the films from AsF(5)/SiH(4) have lower resistivity than films from AsH(3)/SiH(4) prepared under otherwise identical conditions. This indicates more efficient doping with the fluoride carrier. Films from AsF(5)/SiH(4) exhibit higher photoconductive response to about 100 mw/cm of white carriers provided 30 times more response than those made from hydride carriers. This indicates either a passivation of detrimental defects or incorporation of photosensitivity centers from the fluoride or associated impurities.