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Combination Reactive Ion Plasma Etch System With Batch Capability and Individual Wafer Treatment

IP.com Disclosure Number: IPCOM000052335D
Original Publication Date: 1981-Jun-01
Included in the Prior Art Database: 2005-Feb-11

Publishing Venue

IBM

Related People

Authors:
Hassan, JK Hendricks, CJ Keller, JH [+details]

Abstract

A plasma reactor is provided which exhibits the ability to stop a plasma process (e.g., etching or deposition) on individual wafers of a multi-wafer batch upon receipt of a signal from a process monitor. In addition, the reactor has the ability to operate in both reactive ion etch (RIE) and plasma etch operating modes with the capability of continuous transition between the two modes.