Browse Prior Art Database

FET Structure

IP.com Disclosure Number: IPCOM000052341D
Original Publication Date: 1981-Jun-01
Included in the Prior Art Database: 2005-Feb-11

Publishing Venue

IBM

Related People

Authors:
Jambotkar, CG [+details]

Abstract

A method is disclosed for fabricating an FET structure which provides improved performance characteristics. The FET source and drain of such structure have thick SiO(2) islands beneath them formed in a manner self-aligned to the SiO(2)/Si(3)N(4) sidewall of the N/+/ polysilicon gate.