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Technique to Form Bipolar Transistors With Very Low Collector Resistance

IP.com Disclosure Number: IPCOM000052342D
Original Publication Date: 1981-Jun-01
Included in the Prior Art Database: 2005-Feb-11

Publishing Venue

IBM

Related People

Authors:
Anantha, NG Srinivasan, GR [+details]

Abstract

Diffused subcollectors are replaced by a high conductivity silicide covered by overlying laterally grown epitaxial silicon to reduce collector resistance to a very low value.