The following operators can be used to better focus your queries.
( ) , AND, OR, NOT, W/#
? single char wildcard, not at start
* multi char wildcard, not at start
(Cat? OR feline) AND NOT dog?
Cat? W/5 behavior
(Cat? OR feline) AND traits
Cat AND charact*
This guide provides a more detailed description of the syntax that is supported along with examples.
This search box also supports the look-up of an IP.com Digital Signature (also referred to as Fingerprint); enter the 72-, 48-, or 32-character code to retrieve details of the associated file or submission.
Concept Search - What can I type?
For a concept search, you can enter phrases, sentences, or full paragraphs in English. For example, copy and paste the abstract of a patent application or paragraphs from an article.
Concept search eliminates the need for complex Boolean syntax to inform retrieval. Our Semantic Gist engine uses advanced cognitive semantic analysis to extract the meaning of data. This reduces the chances of missing valuable information, that may result from traditional keyword searching.
Diffused subcollectors are replaced by a high conductivity silicide covered by overlying laterally grown epitaxial silicon to reduce collector resistance to a very low value.
English (United States)
This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
100% of the total text.
Page 1 of 2
Technique to Form Bipolar Transistors With Very Low Collector Resistance
Diffused subcollectors are replaced by a high conductivity silicide covered by
overlying laterally grown epitaxial silicon to reduce collector resistance to a very
A layer of metal silicide 1 (such as PtSi) is formed on p-silicon substrate 2.
This can be done by depositing the metal and sintering. A fine grid of parallel
grooves 3 is etched through silicide, as shown in Fig. 1. The grid spacing could
be of the order of a few micrometers.
Epitaxial silicon 4 is deposited selectively in grooves 3. By adjusting the ratio
of the reactant gases, little or no deposition occurs on the non-groove areas to
produce the structure of Fig. 2. A suitably doped second epi 5 is grown using
conditions such that preferential epitaxial nucleation occurs over the first epi 4
and that the second epi 5 propagates transversely over the non-groove areas, as
shown in Fig. 3.
The buried silicide regions 1 serve as buried subcollectors. The remainder of
the bipolar transistor structure is formed in the second epi 5 using conventional
Page 2 of 2
[This page contains 3 pictures or other non-text objects]